![]() ![]() MJ2955 2 Electrical characteristics (T = 25☌ unless otherwise specified) case Electrical characteristics Table 3. operating junction temperature J Note: For PNP type voltage and current values are negative 2/7 Parameter = 100 Ω ≤ 25☌ c 2N3055 MJ2955 Value Unit NPN 2N3055 PNP MJ2955 100 115 -65 to 200 200 ☌. P Total dissipation at T TOT T Storage temperature stg T Max. Marking Package 2N3055 TO-3 MJ2955 Rev 7 2N3055 MJ2955 1 2 TO-3 Internal schematic diagram Packaging tray 1/7 7. Complementary power transistors Figure 1. ![]() Device summary Order code 2N3055 MJ2955 January 2008. TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. Power Transistor (NPN) 2N3055 Dimensions in mm TO-3 *Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Small Signal Current Gain Cut-off Frequency Second Breakdown Collector Current with Base Forward Biased Power Transistor (NPN) 2N3055 Electrical Characteristics (T Ambient=25✬ unless noted otherwise) Symbol Operating Junction and Storage Temperature Range Maximum Ratings (T Ambient=25✬ unless noted otherwise) Symbol Solderable per MIL-STD-202, Method 208 20 grams (approx) ![]() General Purpose Switching and Amplifier Applications.Power Transistor (NPN) 2N3055 Power Transistor (NPN) Features ![]()
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